MRF7S19100NR1 MRF7S19100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?10
1 10010
?40
?50
?30
?20
?60
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
?1
?3
?5
30
Actual
Ideal
0
?2
?4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
?3 dB = 47 W
300
14
20
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1000 mA
f = 1960 MHz
TC
= ?30
C
25C
85C
?30C
25C
85C
10
1
19
18
17
16
15
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
20
40
200
VDD
= 28 Vdc, I
DQ
= 1000 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
50
60
100
20
50
45
40
35
30
25
η
D
,
DRAIN EFFICIENCY (%)
VDD
= 28 Vdc, I
DQ
= 1000 mA
f = 1960 MHz, Input PAR = 7.5 dB
?1 dB = 25 W
?2 dB = 35 W
TWO?TONE SPACING (MHz)
?60
1 10010
0
?10
?20
?40
IMD, INTERMODULATION DISTORTION (dBc)
?50
?30
IM7?U
IM7?L
IM3?U
IM3?L
IM5?U
IM5?L
VDD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
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